Chemical vapor deposition growth of few-layer graphene for transparent conductive films

被引:14
作者
Pu, Jun [1 ]
Tang, Lei [1 ]
Li, Chaowei [1 ]
Li, Taotao [1 ]
Ling, Lin [1 ,2 ]
Zhang, Kai [1 ]
Li, Qingwen [1 ]
Yao, Yagang [1 ]
机构
[1] Chinese Acad Sci, Univ Chinese Acad Sci, Suzhou Inst Nanotech & Nanob, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[2] Jiangnan Univ, Sch Chem & Mat Engn, Wuxi 214122, Peoples R China
基金
美国国家科学基金会;
关键词
LARGE-AREA; UNIFORM GRAPHENE; CARBON NANOTUBE; CVD GROWTH; COPPER; HYDROGEN;
D O I
10.1039/c5ra03919c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The layer numbers of graphene for graphene based transparent conductive films are crucial. An appropriate number of graphene layers would provide excellent electrical conductivity along with high transparency. Herein, we demonstrated a facile and scalable technique to grow graphene with controllable layers on copper foil substrates using the etching effect of H-2 in atmospheric pressure chemical vapor deposition (APCVD), and studied the influence of H-2 etching on the properties of graphene transparent conductive films. The etching of formed multi-layer graphene (MLG, 12-14 layers) for Cu substrates assists the formation of few-layer graphene (FLG, 2-3 layers). These as-obtained graphene can be used as high performance transparent conductors, which show improved tradeoff between conductivity and transparency: the transmittance of 96.4% at 550 nm with sheet resistance of similar to 360 Omega sq(-1), and the transmittance of 86.7% at 550 nm with sheet resistance of similar to 142 Omega sq(-1). They could be used as high performance transparent conductors in the future.
引用
收藏
页码:44142 / 44148
页数:7
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