Light-induced defect creation under intense pulsed illumination in hydrogenated amorphous silicon

Some experimental results taken from the literatures on the kinetics of light-induced defect creation observed under intense pulsed illumination in hydrogenated amorphous silicon (a-Si:H) are reviewed and are discussed in terms of our model. The deconvolution of the ESR line into two components due to normal dangling bonds and hydrogen-related dangling bonds is performed and is compared with their spin density ratio calculated from our model, being consistent with our model. The relationships of the dispersion parameter, P, and the characteristic time, T, vs. the generation rate of free carriers are discussed, being also consistent with our model. Related defects, i.e., hydrogen-related dangling bonds, self-trapped holes and hydrogen-pairs, are discussed.