A Review of SiC IGBT: Models, Fabrications, Characteristics, and Applications

被引：115
作者：
Han, Lubin [1 ]
Liang, Lin [1 ]
Kang, Yong [1 ]
Qiu, Yufeng [2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Elect & Elect Engn, Wuhan 430074, Peoples R China
[2] Global Energy Interconnect Res Inst, Beijing 102200, Peoples R China
来源：
IEEE TRANSACTIONS ON POWER ELECTRONICS | 2021年 / 36卷 / 02期
基金：
国家重点研发计划;
关键词：
Insulated gate bipolar transistors; Silicon carbide; Integrated circuit modeling; Mathematical model; Silicon; Numerical models; Predictive models; Applications; characteristics; device models; insulated gate bipolar transistor (IGBT); review; silicon carbide; structure designs; MINORITY-CARRIER LIFETIME; DEFECTS; STATE;
D O I：
10.1109/TPEL.2020.3005940
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully. This article presents a thorough review of development of SiC IGBT in the past 30 years. The progresses of models, structure design, and performance in SiC IGBT are summarized. The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail. The experimental results and existing problems in SiC IGBT-based applications are summarized in the end.
引用
收藏
页码：2080 / 2093
页数：14
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