Modulation of Multidomain in AlGaN/GaN HEMT-Like Planar Gunn Diode

被引：17

作者：

Wang, Ying ^{[1
]}

Yang, Lin-An ^{[1
]}

Mao, Wei ^{[1
]}

Long, Shuang ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 05期

关键词：

AlGaN/GaN heterostructure; multiple domains; planar Gunn diode; terahertz; VELOCITY-FIELD CHARACTERISTICS; MONTE-CARLO CALCULATION; BULK GAN; MOBILITY; HETEROSTRUCTURES; GENERATION; ELECTRONS;

D O I：

10.1109/TED.2013.2250976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz oscillations of AlGaN/GaN HEMT-like planar Gunn diodes with the channel length ranging from 0.6 to 1.6 mu m have been investigated for the first time by means of numerical simulations at the Silvaco's ATLAS platform, with an emphasis on the mechanism of multiple domains coexisting in the 2-D electron gas (2-DEG) channel of planar Gunn diode. We found that the phenomenon of multidomain evidently influences the oscillation mode and the radio frequency performance of devices, and it is effective in redistributing the electric field throughout the 2-DEG channel by adjusting the doping concentration near the cathode side, which aims to modulate the formation of multidomain so as to enhance the output performance of planar Gunn diodes at terahertz frequencies.

引用

页码：1600 / 1606

页数：7

共 30 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].