Effect of a Pinning Field on the Critical Current Density for Current-Induced Domain Wall Motion in Perpendicular Magnetic Anisotropy Nanowires

被引:12
作者
Ooba, Ayaka [1 ]
Fujimura, Yuma [1 ]
Takahashi, Kota [1 ]
Komine, Takashi [1 ]
Sugita, Ryuji [1 ]
机构
[1] Ibaraki Univ, Dept Media & Telecommun Engn, Hitachi, Ibaraki 3168511, Japan
基金
日本学术振兴会;
关键词
Current-Induced Domain Wall Motion; Pinning Field; Pinning Potential;
D O I
10.1166/jnn.2012.6544
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, the effect of a pinning field on the critical current density for current-induced domain wall motion in nanowires with perpendicular magnetic anisotropy was investigated using micromagnetic simulations. In order to estimate the pinning field in notched nanowires, we conducted wall energy calculations for nanowires with various saturation magnetizations. The pinning field increased as the notch size increased. The pinning field decreased as the saturation magnetization decreased. As a result, the decreased in the pinning field causes the reduction of the critical current density. Therefore, a significant reduction of the critical current density can be obtained by decreasing the saturation magnetization, even if wall pinning occurs.
引用
收藏
页码:7411 / 7415
页数:5
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