Effect of the Substrate on Phonon Properties of Graphene Estimated by Raman Spectroscopy

被引：2
|
作者：
Tivanov, M. S. [1 ]
Kolesov, E. A. [1 ]
Korolik, O. V. [1 ]
Saad, A. M. [2 ]
Komissarov, I. V. [3 ]
机构：
[1] Belarusian State Univ, 4 Nezavisimosti Ave, Minsk 220030, BELARUS
[2] Al Balqa Appl Univ, POB 4545, Amman 11953, Jordan
[3] Belarusian State Univ Informat & Radioelect, 6 P Brovka, Minsk 220013, BELARUS
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2018年 / 190卷 / 1-2期
关键词：
Graphene; Temperature; Phonon-phonon interaction; Electron-phonon interaction; Substrate; Raman spectroscopy; THERMAL-CONDUCTIVITY;
D O I：
10.1007/s10909-017-1807-x
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature Raman studies of supported graphene are presented. A linear temperature dependence of 2D peak linewidths was observed with the coefficients of 0.036 and 0.033 cm/K for graphene on copper and glass substrates, respectively, while G peak linewidths remained unchanged throughout the whole temperature range. The different values observed for graphene on glass and copper substrates were explained in terms of the substrate effect on phonon-phonon and electron-phonon interaction properties of the material. The results of the present study can be used to consider substrate effects on phonon transport in graphene for nanoelectronic device engineering.
引用
收藏
页码：20 / 25
页数：6
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