Ultra-high Bandwidth InP IQ Modulators for Next Generation Coherent Transmitter

被引:0
作者
Ogiso, Yoshihiro [1 ]
Ozaki, Josuke [1 ]
Ueda, Yuta [1 ]
Kanazawa, Shigeru [1 ]
Tanobe, Hiromasa [1 ]
Nakano, Shinsuke [2 ]
Yamazaki, Hiroshi [2 ]
Fujii, Takuro [2 ]
Yamada, Eiichi [1 ]
Nunoya, Nobuhiro [1 ]
Kikuchi, Nobuhiro [1 ]
机构
[1] NTT Corp, NTT Device Innovat Ctr, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
来源
2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2017年
关键词
Electrooptic modulators; indium compounds; Mach-Zehnder modulators; semiconductor waveguide;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present recently developed ultra-high bandwidth and low V-pi InP-based in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The IQ modulator itself exhibits up to 120-Gbaud rate IQ modulations without optical pre equalization. Furthermore, we examined a low-power dissipation IQ modulator co-assembled with a 495-mW/2ch CMOS differential driver IC, and successfully demonstrated a 64-Gbaud/16QAM operation.
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页数:4
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