Facile liquid-phase exfoliated few-layer GeP nanosheets and their optoelectronic device applications

被引：26

作者：

Li, Chao ^{[1
]}

Guo, Jia ^{[1
]}

Zhang, Yue ^{[2
]}

Kang, Jianlong ^{[1
]}

Huang, Weichun ^{[3
]}

Zhai, Tianyou ^{[2
]}

Zhang, Han ^{[1
]}

机构：

[1] Shenzhen Univ, Inst Microscale Optoelect,Shenzhen Key Lab Micron, Collaborat Innovat Ctr Optoelect Sci & Technol,Co, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China

[2] Huazhong Univ Sci & Technol HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China

[3] Nantong Univ, Coll Chem & Chem Engn, Nantong 226019, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2020年 / 8卷 / 16期

基金：

中国国家自然科学基金;

关键词：

BLACK-PHOSPHORUS; TRANSPORT; GROWTH; SEMICONDUCTOR; PASSIVATION; GAP; SIP; AIR;

D O I：

10.1039/d0tc00356e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Owing to their attractive high carrier mobility, ambient stability, superior mechanical flexibility, large band gap and excellent optical properties, group IV-V compounds, as a new kind of 2D materials, show a promising potential application for optoelectronic devices. Herein, 2D GeP nanosheets were exfoliated by a facile LPE method and a photoelectrochemical (PEC)-type photodetector employing a doctor blade deposited 2D GeP nanosheet electrode on an ITO-coated glass was fabricated. Ultrafast carrier dynamics was carefully probed by transient absorption spectroscopy, and the parameters of the photodetector, such as the voltage and electrolyte concentration, were highly optimized. It shows remarkable performance with a responsivity of 187.5 mu A W-1, a detectivity of 2.14 x 10(12)Jones and an EQE of 61.3% at an ultraviolet wavelength of 380 nm. The proposed strategy avoids complicated material preparation and device fabrication and facilitates large-area photodetection.

引用

页码：5547 / 5553

页数：7