Direct growth of CdSe nanorods on ITO substrates by co-anchoring of ZnO nanoparticles and ethylenediamine

被引：4

作者：

Pan, Shangke ^{[1
,2
]}

Xu, Tingting ^{[1
]}

Venkatesan, Swaminathan ^{[1
]}

Qiao, Qiquan ^{[1
]}

机构：

[1] S Dakota State Univ, Dept Elect Engn & Comp Sci, Ctr Adv Photovolta, Brookings, SD 57007 USA

[2] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2012年 / 14卷 / 09期

基金：

美国国家科学基金会;

关键词：

CdSe; Nanorods; Buffer layer; Precursor transformation; SELECTIVE SYNTHESIS; QUANTUM DOTS; CDE E; NANOCRYSTALS; MORPHOLOGY; TRANSPORT; PHASE; SE;

D O I：

10.1007/s11051-012-1115-y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

To grow CdSe nanorods directly onto indium tin oxide (ITO) substrates, a ZnO buffer layer composed of nanoparticles with diameter of similar to 30-40 nm was prepared by spin coating ZnO sol-gel solution onto the ITO substrates. CdSe nanorods were then successfully in situ grown onto ITO substrates with diameter of similar to 30-40 nm and length of similar to 120-160 nm using solvothermal method in which CdSe center dot 0.5en (en = ethylenediamine) acted as solution precursor. The in situ synthesized CdSe nanorods were conformed and characterized by atomic force microscope and electron microscopy. The mechanism of such in situ CdSe growth was understood as ZnO nanoparticles anchored en onto ITO substrates, while en linked CdSe with ZnO.

引用

页数：7