Band-gap modification of defective carbon nanotubes under a transverse electric field

被引：35

作者：

Tien, LG ^{[1
]}

Tsai, CH

Li, FY

Lee, MH

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

[2] Natl Chung Hsing Univ, Dept Chem, Taichung 420, Taiwan

[3] Tamkang Univ, Dept Phys, Tamsui 25137, Taiwan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.72.245417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio calculations show that the band-gap modulation of semiconducting carbon nanotubes with mono-vacancy defect can be easily achieved by applying a transverse electric field. We found that the band structures of the defective carbon nanotubes vary quite differently from that of the perfect nanotube, and strongly depend on the applied direction of the transverse electric field. A mechanism is proposed to explain the variation of the band gap, and potential applications of these phenomena are discussed.

引用

页数：6

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