Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBTs

被引：1
|
作者：
Richey, DM [1 ]
Cressler, JD [1 ]
机构：
[1] AUBURN UNIV,DEPT ELECT ENGN,ALABAMA MICROELECT SCI & TECHNOL CTR,AUBURN,AL 36849
来源：
PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1996年
关键词：
D O I：
10.1109/BIPOL.1996.553890
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：19 / 22
页数：4
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