Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3D Integration

被引：8
|
作者：
Liu, Ziyu [1 ]
Cai, Jian [1 ,2 ]
Wang, Qian [1 ]
Tan, Lin [1 ]
Hun, Yang [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
[2] Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 10期
关键词：
MICROSTRUCTURE EVOLUTION;
D O I：
10.1149/2.0061510ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel reliable low temperature short time Cu-Cu bonding method using Ag nanostructure for 3D integration was realized in the work. Ag nanostructure consisted of many nanoparticles (NP) were deposited by pulsed laser deposition on patterned Cu pads. Bonding process was completed at 250 degrees C for 5 mm followed by an annealing process at 250 degrees C for 25 min. Average shear strength of 14.4 MPa was reached and cracks occurred at bonded Ag interfaces, Ag/Cu interfaces and TiW/Al interfaces. According to cross-sectional interface inspection, continuous void-free bonded-Ag film was observed at the bonding interface, which was significantly beneficial to lowering electrical resistance. (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P75 / P76
页数：2
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