Space- and Time-Resolved Mapping of Ionic Dynamic and Electroresistive Phenomena in Lateral Devices

被引：38
作者：
Strelcov, Evgheni [1 ]
Jesse, Stephen [1 ]
Huang, Yen-Lin [2 ]
Teng, Yung-Chun [2 ]
Kravchenko, Ivan I. [1 ]
Chu, Ying-Hao [2 ]
Kalinin, Sergei V. [1 ]
机构：
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
ACS NANO | 2013年 / 7卷 / 08期
关键词：
KPFM; ionic dynamics; Ca-BFO; surface potential distribution; oxygen vacancy; PROBE FORCE MICROSCOPY; ELECTRIC-FIELD; SEMICONDUCTOR; RESOLUTION; SENSOR; OPPORTUNITIES; CHALLENGES; DIFFUSION; EQUATION; OXIDES;
D O I：
10.1021/nn4017873
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A scanning probe microscopy-based technique for probing local ionic and electronic transport and their dynamic behavior on the 10 ms to 10 s scale is presented. The time-resolved Kelvin probe force microscopy (tr-KPFM) allows mapping of surface potential in both space and time domains, visualizing electronic and ionic charge dynamics and separating underlying processes based on their time responses. Here, tr-KPFM is employed to explore the interplay of the adsorbed surface ions and bulk oxygen vacancies and their role in the resistive switching in a Ca-substituted bismuth ferrite thin film.
引用
收藏
页码：6806 / 6815
页数：10
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