Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-μm T-gate AlGaN/GaN HEMTs on Silicon by (NH4)2Sx Treatment

被引：50

作者：

Arulkumaran, S. ^{[1
]}

Ng, G. I. ^{[2
]}

Vicknesh, S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 11期

关键词：

AlGaN/GaN; breakdown voltage (BVgd) (NH4)(2)S-x passivation; cutoff frequency; HEMT; Johnson's figures of merit (J-FOM); POWER-DENSITY; SI; PERFORMANCE; GHZ;

D O I：

10.1109/LED.2013.2279882

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhanced OFF-state breakdown voltage has been observed in ammonium sulfide [(NH4)(2)S-x]-treated AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate without compromising the unit gain cutoff frequencies. About six times higher OFF-state breakdown voltage (BVgd) and three orders of magnitude higher I-ON/I-OFF ratio were observed in the (NH4)(2)S-x-treated 0.3-mu m T-gate conventional AlGaN/GaN HEMTs on Si substrate. In addition, three orders of magnitude lower surface leakage current (similar to 3.0 mu A/mm to similar to 3 nA/mm) have also been observed on the (NH4)(2)S-x-treated devices. The calculated Johnson's figures of merit (J-FOM = BVgd x f(T)) is 5.41 x 10(12) V/s, which is the highest value reported so far for 0.3-mu m T-gate conventional SiN passivated AlGaN/GaN HEMTs without the incorporation of field plate. No significant drain current collapse was observed on the (NH4)(2)S-x-treated devices.

引用

页码：1364 / 1366

页数：3

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