Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

被引：4

作者：

Chen, Yu-Chun ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Li, Hung-Wei ^{[3
,4
]}

Chung, Wan-Fang ^{[3
,4
]}

Hsieh, Tien-Yu ^{[1
]}

Chen, Yi-Hsien ^{[1
]}

Tsai, Wu-Wei ^{[5
]}

Chiang, Wen-Jen ^{[5
]}

Yan, Jing-Yi ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

[5] Ind Technol Res Inst, Hsinchu 31040, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 04期

关键词：

D O I：

10.1149/2.028304jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study examines the dependence of light-accelerated instability on bias and environment in amorphous indium-gallium-zinc-oxide thin film transistors. When device is in vacuum ambient, the threshold voltage of device after negative gate bias illumination stress (NBIS) showed bias-dependent electrical degradation behavior. However, experimental results show the degradation of electrical characteristic in a-IGZO devices does not only rely on the charge trapping mechanism for NBIS. During NBIS in oxygen, moisture-simulated and atmosphere ambient, the negative shift in electrical characteristic is suppressed when compared to that in vacuum. This implies that the adsorbent gas species in the surrounding environment dominates the electrical characteristic degradation of devices during NBIS, which leading the change of dominant mechanism from photon-created carrier trapping to adsorbed/desorbed gas phenomenon. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：Q74 / Q76

页数：3

共 19 条

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