Adsorption kinetics of acetylene and ethylene on Si(001)

被引:83
作者
Cho, JH
Kleinman, L
机构
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[2] Univ Texas, Dept Phys, Austin, TX 78712 USA
关键词
D O I
10.1103/PhysRevB.69.075303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reaction of acetylene and ethylene on the Si(001) surface is investigated by first-principles density-functional calculations within the generalized-gradient approximation. We have identified the two different reaction pathways that result in adsorptions on top of a single dimer and across the ends of two adjacent dimers in the same dimer row. Our calculated energy profile of the reaction path shows that C2H2 easily occupies both configurations because the difference between their reaction barriers is small, whereas C2H4 occupies mainly the former configuration because of a relatively larger barrier for formation of the latter configuration. This result provides an explanation for a subtle difference in the adsorption structures of C2H2 and C2H4.
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页数:6
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