Novel prototype Si detector development and processing at BNL

被引：10

作者：

Li, Z ^{[1
]}

Beuttenmuller, R ^{[1
]}

Chen, W ^{[1
]}

Elliott, D ^{[1
]}

Radeka, V ^{[1
]}

Takahashi, J ^{[1
]}

Zhang, WC ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 478卷 / 1-2期

关键词：

Si detectors; detector simulation; detector processing; radiation tolerance/hardness; Si drift detectors; microstrip detector; pixel detector;

D O I：

10.1016/S0168-9002(01)01815-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A variety of Si detectors have been developed and processed at BNL with its unique detector fabrication facility. These detectors include Si drift detectors (SDD); Si micro- and mm-strip detectors; Si pad detectors; and Si pixel detectors with a variety of configurations. In this paper, the details of the design and processing technology of large area SDD for the STAR SVT at RHIC, micro- and mm-strip detectors for CERN RD39/NA60 experiments, and radiation tolerant n/n, n/p pixel detectors for LHC experiments will be given. In addition, simulation results of new types of Si strip/pixel detectors with improved radiation tolerance will be presented for the first time. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：303 / 310

页数：8

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