Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

被引：8

作者：

Mather, S. ^{[1
]}

Sedghi, N. ^{[2
]}

Althobaiti, M. ^{[3
]}

Mitrovic, I. Z. ^{[2
]}

Dhanak, V. ^{[3
]}

Chalker, P. R. ^{[1
]}

Hall, S. ^{[2
]}

机构：

[1] Univ Liverpool, Sch Engn, Liverpool L69 3GH, Merseyside, England

[2] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[3] Univ Liverpool, Dept Phys, Liverpool L69 7ZE, Merseyside, England

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

基金：

英国工程与自然科学研究理事会;

关键词：

MOS device; Ge MOS; HfO2; ALD;

D O I：

10.1016/j.mee.2013.03.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-kappa dielectric gate stacks comprising HfO2 were fabricated on Ge with alumina as the barrier level. This was achieved by thermal annealing in an ultra high vacuum to remove the native oxide followed by deposition of aluminium by molecular beam epitaxy. After in situ oxidation at ambient temperature, HfO2 was deposited by atomic layer deposition. The devices underwent physical and electrical characterisation and show low EOT down to 1.3 nm, low leakage current of less than 10(-7) Acm(-2) at +/- 1 V, and CV hysteresis of similar to 10 mV. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：126 / 128

页数：3

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