C-band single-chip GaN-FET power amplifiers with 60-W output power

被引：6

作者：

Okamoto, Y ^{[1
]}

Wakejima, A ^{[1
]}

Matsunaga, K ^{[1
]}

Ando, Y ^{[1
]}

Nakayama, T ^{[1
]}

Kasahara, K ^{[1
]}

Ota, K ^{[1
]}

Murase, Y ^{[1
]}

Yamanoguchi, K ^{[1
]}

Inoue, T ^{[1
]}

Miyamoto, H ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, Adv HF Device R&D Ctr, R&D Assoc Future Electron Devices, Shiga 5200833, Japan

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

GaN; FET; power amplifier; C-band;

D O I：

10.1109/MWSYM.2005.1516637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A C-band high power amplifier was successfulh, developed with a single-chip GaN-based FET. At 4.OGHz, the fabricated 24-mm wide FET delivers 62 W and 156W under CW and pulsed operating conditions, respectively with a universal test fixture. The internal matching circuit was designed to be set up in a half-size package as compared to that for GaAs-based comparable-power-level amplifiers. The developed GaN-FET amplifier with 24-mm gate periphery delivers a 61W output power with 10.2dB linear gain and 42% power-added efficiency under CW operating conditions. To the best of our knowledge, this is the highest CW output power mchieved from a single-chip FET power am plifier at C-band.

引用

页码：491 / 494

页数：4

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