High-pressure dielectric behavior of BaMoO4: a combined experimental and theoretical study

被引:19
作者
Qin, Tianru [1 ]
Wang, Qinglin [2 ]
Wang, Li [1 ]
Yan, Huacai [1 ]
Liu, Cailong [1 ]
Han, Yonghao [1 ]
Ma, Yanzhang [3 ,4 ]
Gao, Chunxiao [1 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Peoples R China
[3] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA
[4] Ctr High Pressure Sci & Technol Adv Res, Changchun 130012, Peoples R China
基金
中国国家自然科学基金;
关键词
MICROWAVE-ASSISTED SYNTHESIS; PHOTOLUMINESCENCE PROPERTIES; COMPLEX METHOD; BAXO4; X; NANOSTRUCTURES; SR; CA; TEMPERATURE; PROPERTY; CAMOO4;
D O I
10.1039/c6cp06323c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In situ impedance measurements were employed to investigate the electrical transport properties of BaMoO4 under pressures of up to 20.0 GPa. Two anomalous changes in the electrical parameters were found, related to the pressure-induced structural phase transitions. The dielectric performance of BaMoO4 was improved by pressure. The dispersion in the real part of dielectric constant versus frequency weakens with increasing pressure. Based on the first-principles calculations, the increases of resistance with increasing pressure in the tetragonal and monoclinic phases were mainly caused by the increasing defect levels. The decrease of the relative permittivity in the tetragonal phase was attributed to pressure-induced strengthening in electronic localization around Mo atoms, which hindered the polarization of Mo-O electric dipoles.
引用
收藏
页码:33109 / 33114
页数:6
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