Influence of hydrogen annealing on the optoelectronic properties of WO3 thin films

被引：61

作者：

Saleem, M. ^{[1
]}

Al-Kuhaili, M. F. ^{[2
]}

Durrani, S. M. A. ^{[2
]}

Hendi, A. H. Y. ^{[2
]}

Bakhtiari, I. A. ^{[2
]}

Ali, S. ^{[3
]}

机构：

[1] King Fahd Univ Petr & Minerals, Preparatory Year Program Phys, Dhahran 31261, Saudi Arabia

[2] King Fahd Univ Petr & Minerals, Dept Phys, Dhahran 31261, Saudi Arabia

[3] King Fahd Univ Petr & Minerals, Dept Mech Engn, Dhahran 31261, Saudi Arabia

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2015年 / 40卷 / 36期

关键词：

WO3 thin films; Hydrogen annealing; Electrical properties; Optical properties; OPTICAL-PROPERTIES; PHOTOCATALYTIC ACTIVITY; XPS; SURFACE; PHOTOCHROMISM; DEPOSITION; REDUCTION;

D O I：

10.1016/j.ijhydene.2015.06.078

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The optoelectronic properties of WO3 thin films were investigated after hydrogen treatment. Thin films were deposited on heated substrates by the thermal evaporation and were subsequently annealed at various temperatures in hydrogen for 2 h. Structural studies were performed using X-ray diffraction and atomic force microscopy. As-deposited films were amorphous and became crystalline by thermal annealing. The chemical properties were characterized by X-ray photoelectron spectroscopy, and revealed reduction in stoichiometry and the presence of oxygen vacancies in the films as a result of hydrogen annealing. Spectrophotometric measurements showed that the transmittance of the films was decreased consistently with hydrogen annealing. Significant changes in the optical constants and indirect band gap were noticed. Hall measurements showed the significantly reduced electrical resistivity due to the presence of oxygen vacancies. Copyright (C) 2015, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：12343 / 12351

页数：9

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