Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

被引：66

作者：

Cao, Helin ^{[1
,2
]}

Venkatasubramanian, Rama ^{[3
]}

Liu, Chang ^{[4
,5
]}

Pierce, Jonathan ^{[3
]}

Yang, Haoran ^{[6
]}

Hasan, M. Zahid ^{[4
,5
]}

Wu, Yue ^{[6
]}

Chen, Yong P. ^{[1
,2
,7
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] RTI Int, Ctr Solid State Energet, Res Triangle Pk, NC 27709 USA

[4] Princeton Univ, Dept Phys, Joseph Henry Labs, Princeton, NJ 08544 USA

[5] Princeton Univ, Princeton Inst Sci & Technol Mat, Princeton, NJ 08544 USA

[6] Purdue Univ, Sch Chem Engn, W Lafayette, IN 47907 USA

[7] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 16期

关键词：

BISMUTH TELLURIDE; THIN-FILMS; CRYSTAL-GROWTH; SUPERLATTICE STRUCTURES; THERMAL-PROPERTIES; SB2TE3; RESISTIVITY;

D O I：

10.1063/1.4760226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of similar to 350 cm(2)/Vs at 300 K and similar to 7400 cm(2)/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4760226]

引用

页数：4

共 37 条

[1] Sb2Te3 and Bi2Te3 Thin Films Grown by Room-Temperature MBE [J].

Aabdin, Z. ;

Peranio, N. ;

Winkler, M. ;

Bessas, D. ;

Koenig, J. ;

Hermann, R. P. ;

Boettner, H. ;

Eibl, O. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (06) :1493-1497

[2] STM Imaging of Electronic Waves on the Surface of Bi2Te3: Topologically Protected Surface States and Hexagonal Warping Effects [J].

Alpichshev, Zhanybek ;

Analytis, J. G. ;

Chu, J. -H. ;

Fisher, I. R. ;

Chen, Y. L. ;

Shen, Z. X. ;

Fang, A. ;

Kapitulnik, A. .

PHYSICAL REVIEW LETTERS, 2010, 104 (01)

[3] Bulk Fermi surface coexistence with Dirac surface state in Bi2Se3: A comparison of photoemission and Shubnikov-de Haas measurements [J].

Analytis, James G. ;

Chu, Jiun-Haw ;

Chen, Yulin ;

Corredor, Felipe ;

McDonald, Ross D. ;

Shen, Z. X. ;

Fisher, Ian R. .

PHYSICAL REVIEW B, 2010, 81 (20)

[4] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[5] SIZE AND TEMPERATURE EFFECTS ON THE THERMOELECTRIC-POWER AND ELECTRICAL-RESISTIVITY OF BISMUTH TELLURIDE THIN-FILMS [J].

DAS, VD ;

SOUNDARARAJAN, N .

PHYSICAL REVIEW B, 1988, 37 (09) :4552-4559

[6] THERMAL-PROPERTIES OF HIGH-QUALITY SINGLE-CRYSTALS OF BISMUTH TELLURIDE .1. EXPERIMENTAL CHARACTERIZATION [J].

FLEURIAL, JP ;

GAILLIARD, L ;

TRIBOULET, R ;

SCHERRER, H ;

SCHERRER, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (10) :1237-1247

[7] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE [J].

FRANCOMBE, MH .

PHILOSOPHICAL MAGAZINE, 1964, 10 (108) :989-&

[8] Hexagonal Warping Effects in the Surface States of the Topological Insulator Bi2Te3 [J].

Fu, Liang .

PHYSICAL REVIEW LETTERS, 2009, 103 (26)

[9] PREPARATION AND PROPERTIES OF CO-EVAPORATED BISMUTH TELLURIDE [BI2TE3] THIN-FILMS [J].

GEORGE, J ;

PRADEEP, B .

SOLID STATE COMMUNICATIONS, 1985, 56 (01) :117-120

[10] Optimization of thermoelectric properties on Bi2Te3 thin films deposited by thermal co-evaporation [J].

Goncalves, L. M. ;

Couto, C. ;

Alpuim, P. ;

Rolo, A. G. ;

Voelklein, F. ;

Correia, J. H. .

THIN SOLID FILMS, 2010, 518 (10) :2816-2821

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