Instant Glue Passivation Layer of Indium-Gallium-Zinc Oxide Thin Film Transistors

被引：0

作者：

Yoo, Hyukjoon ^{[1
]}

Tak, Young Jun ^{[1
]}

Kang, Byung Ha ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 03722, South Korea

来源：

2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We suggest instant glue for passivation layer of indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). The instant glue is liquid in room temperature, thus we could easily drop the glue on the IGZO channel layer. As a result, the IGZO TFTs with glue passivation layer (GPL) showed improved electrical characteristics such as field effect mobility of 12.11 cm(2)/Vs, on/off ratio of 8.72x10(7), and subthreshold swing of 0.39 V/dec. Furthermore, stability test under positive bias temperature stress of IGZO TFTs with GPL showed low threshold voltage shift at 1.0 V. These results indicate that GPL can play significant role for both improving electrical characteristics and enhancing stability by blocking the oxygen and moisture in atmosphere efficiently.

引用

页码：306 / 308

页数：3

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