Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

被引：17

作者：

Habuka, Hitoshi ^{[1
]}

Mizuno, Kosuke ^{[1
]}

Ohashi, Shintaro ^{[1
]}

Kinoshita, Tetsuo ^{[2
]}

机构：

[1] Yokohama Natl Univ, Dept Chem & Energy Engn, Yokohama, Kanagawa 2408501, Japan

[2] Pretech Co Ltd, Shizuoka Factory, Yaizu, Shizuoka 4250066, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 06期

关键词：

THIN-FILM; DISSOLUTION; TECHNOLOGY; MECHANISM; GROWTH; SIO2;

D O I：

10.1149/2.013306jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A surface chemical reaction model of silicon dioxide film etching by hydrogen fluoride aqueous solution using a single wafer wet etcher was numerically evaluated taking into account the Langmuir-type rate theory and the transport phenomena. The surface reaction process was assumed to consist of three steps, such as (i) hydrogen fluoride adsorption at the silicon dioxide surface, (ii) chemical reaction of silicon dioxide with hydrogen fluoride and (iii) desorption of the by-product from the surface. The rate constants determined by calculation which could reproduce the silicon dioxide etching rate obtained by experiment. The rate limiting step was additionally evaluated. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P264 / P267

页数：4

共 19 条

[1] ADVANCED METAL-OXIDE SEMICONDUCTOR AND BIPOLAR-DEVICES ON BONDED SILICON-ON-INSULATORS [J].