3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes

被引：28

作者：

Bansal, Anil K. ^{[1
]}

Gupta, Charu ^{[1
]}

Gupta, Anshul ^{[1
]}

Singh, Ramendra ^{[1
]}

Hook, Terence B. ^{[2
]}

Dixit, Abhisek ^{[1
]}

机构：

[1] IIT Delhi, Dept Elect Engn, IEC Grp, New Delhi 110016, India

[2] IBM Res, Albany, NY 12203 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 03期

关键词：

Junctionless (JL); line edge roughness (LER); mismatch; nanowire (NW); random dopant fluctuation (RDF); INTRINSIC PARAMETER FLUCTUATIONS; RANDOM DOPANT FLUCTUATION; LINE-EDGE ROUGHNESS; SI GATE; DECANANOMETER; VARIABILITY; SIMULATION; IMPACT;

D O I：

10.1109/TED.2018.2797799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanowire field-effect transistors (NWFETs) have emerged as promising candidates for realization of advanced CMOS technology nodes. Due to small nanowire dimensions, NWFETs are vulnerable to the impact of process-induced random local variations, such as the line edge roughness (LER) and random dopant fluctuation (RDF). NWFETs have three different device modes, namely, the inversion mode (IM), the accumulation mode (AM), and the junctionless (JL) mode. In this paper, a 3-D quasi-atomistic LER model is used for the analysis of LER-induced mismatch in JL, IM, and AM NWFETs. We have also compared the impact of 3-D LER with that of 2-D LER. In addition, another emerging simulation methodology known as statistical impedance field method is utilized to analyze the impact of RDF on the three flavors of NWFETs. We show-that JL NWFETs have much higher mismatch due to both LER and RDF than their IM and AM NWFET counterparts with otherwise identical device structure.

引用

页码：1246 / 1252

页数：7

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