Pulsed-laser-deposited epitaxial Sr2FeMoO6-y thin films:: Positive and negative magnetoresistance regimes

被引：89
|
作者：
Asano, H [1 ]
Ogale, SB
Garrison, J
Orozco, A
Li, YH
Li, E
Smolyaninova, V
Galley, C
Downes, M
Rajeswari, M
Ramesh, R
Venkatesan, T
机构：
[1] Univ Maryland, NSF, MRSEC Oxides Surfaces & Probes, College Pk, MD 20742 USA
[2] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 24期
关键词：
D O I：
10.1063/1.123224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial thin films of ordered double-perovskite Sr2FeMoO6-y are deposited on (001) SrTiO3 substrates by pulsed-laser deposition using a two step growth process. Selection of growth conditions is found to lead to either highly conductive metallic thin films (residual resistivity of about 1 mu Omega cm) or semiconducting films. The metallic films show a positive magnetoresistance (MR) as high as 35%, while the semiconducting films show a negative MR of -3%, at a temperature of 5 K and a field of 8 T. (C) 1999 American Institute of Physics. [S0003-6951(99)03024-7].
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收藏
页码：3696 / 3698
页数：3
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