Photoelectron emission properties of hydrogen terminated intrinsic diamond

被引：21
作者：
Takeuchi, D. [1 ]
Nebel, C. E. [1 ]
Yamasaki, S. [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期
关键词：
D O I：
10.1063/1.2188070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hydrogen terminated intrinsic diamond is characterized using photoelectron emission spectroscopy. Samples have been annealed at temperatures T-a from 200 to 1000 degrees C. The electron emission characteristics can be divided into three regimes: (I) (T-a < 300 degrees C) is governed by surface band bending which allows only excitons to reach the surface with subsequent dissociation. (II) (300 degrees C <= T-a <= 650 degrees C) shows increased electron emission and the surface band bending has been removed. Here, excitons and electrons contribute. (III) (T-a>650 degrees C) additional rise of emission is detected. The spectra are dominated by photon-phonon interactions which are discussed in detail. (C) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 23 条
  • [1] PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION
    BANDIS, C
    PATE, BB
    [J]. PHYSICAL REVIEW B, 1995, 52 (16) : 12056 - 12071
  • [2] Hydrogen-boron interactions in p-type diamond
    Chevallier, J
    Theys, B
    Lusson, A
    Grattepain, C
    Deneuville, A
    Gheeraert, E
    [J]. PHYSICAL REVIEW B, 1998, 58 (12): : 7966 - 7969
  • [3] INTRINSIC EDGE ABSORPTION IN DIAMOND
    CLARK, CD
    DEAN, PJ
    HARRIS, PV
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1964, 277 (1370) : 312 - +
  • [4] Low-threshold electron emission from diamond
    Cui, JB
    Ristein, J
    Ley, L
    [J]. PHYSICAL REVIEW B, 1999, 60 (23) : 16135 - 16142
  • [5] Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
    Cui, JB
    Ristein, J
    Ley, L
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (02) : 429 - 432
  • [6] INTRINSIC AND EXTRINSIC RECOMBINATION RADIATION FROM NATURAL AND SYNTHETIC ALUMINUM-DOPED DIAMOND
    DEAN, PJ
    LIGHTOWLERS, EC
    WIGHT, DR
    [J]. PHYSICAL REVIEW, 1965, 140 (1A): : A352 - +
  • [7] FORMATION MECHANISM OF P-TYPE SURFACE CONDUCTIVE LAYER ON DEPOSITED DIAMOND FILMS
    GI, RS
    MIZUMASA, T
    AKIBA, Y
    HIROSE, Y
    KUROSU, T
    IIDA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5550 - 5555
  • [8] QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER
    HIMPSEL, FJ
    KNAPP, JA
    VANVECHTEN, JA
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1979, 20 (02): : 624 - 627
  • [9] Origin of surface conductivity in diamond
    Maier, F
    Riedel, M
    Mantel, B
    Ristein, J
    Ley, L
    [J]. PHYSICAL REVIEW LETTERS, 2000, 85 (16) : 3472 - 3475
  • [10] Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
    Maier, F
    Ristein, J
    Ley, L
    [J]. PHYSICAL REVIEW B, 2001, 64 (16)
123