Suppression of boron penetration in P-channel MOSFETs using polycrystalline Si1-x-yGexCy gate layers

被引：6

作者：

Stewart, EJ ^{[1
]}

Carroll, MS ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期

关键词：

annealing; boron; charge carrier mobility; MOSFETs; silicon alloys; stability;

D O I：

10.1109/55.974581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron penetration through thin gate oxides in p-channel MOSFETs with heavily boron-doped gates causes undesirable positive threshold voltage shifts. P-channel MOSFETs with polycrystalline Si1-x-yGexCy gate layers at the gate-oxide interface show substantially reduced boron penetration and increased threshold voltage stability compared to devices with all poly Si gates or with poly Si1-xGex gate layers. Boron accumulates in the poly Si1-x-yGexCy layers in the gate, with less boron entering the gate oxide and substrate. The boron in the poly Si1-x-yGexCy appears to he electrically active, providing similar device performance compared to the poly Si or poly Si1-xGex gated devices.

引用

页码：574 / 576

页数：3

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