Bridgman growth and characterization of Bi4(GexSi1-x)3O12 mixed crystals

被引:20
|
作者
Zhang, Yan [1 ]
Xu, Jiayue [1 ]
He, Qingbo [1 ]
Lu, Baoliang [1 ]
机构
[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 200235, Peoples R China
关键词
Crystal growth; Bi-4(GexSi1-x)(3)O-12 crystal; The Bridgman method; SCINTILLATION PROPERTIES; BSO BI4SI3O12;
D O I
10.1016/j.jcrysgro.2011.12.088
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
BGSO polycrystalline powder was synthesized as starting material by sintering of 4 N Ge2O3, SiO2 and Bi2O3 using solid state reaction method. Using < 0 1 0 >-oriented Bi4Si3O12 crystals as seeds, the mixed crystals of (Bi-4(GexSi1-x)(3)O-12, x=0.05, 0.1, 0.15, BGSO) have been grown by the vertical Bridgman method. Transparent BGSO crystals with a size up to 10 x 15 x 30 mm(3) have been obtained. The lattice parameters increase monotonically with increasing Ge3+ content. The transmittance spectra of BGSO single crystals were achieved in the UV and visible light regions and the absorption edge of BGSO crystal is about 285 nm. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:121 / 124
页数:4
相关论文
共 50 条
  • [31] Phase diagram of mixed crystals of Bi4-xSmxTi3O12
    Iwata, Makato
    Toya, Akihiro
    Aoyagi, Rintaro
    Maeda, Masaki
    Ishibashi, Yoshihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (09) : 7749 - 7752
  • [32] Three-dimensional modelling of melt flow and segregation during Czochralski growth of GexSi1-x single crystals
    Abbasoglu, S.
    Sezai, I.
    INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 2007, 46 (06) : 561 - 572
  • [33] GROWTH AND CHARACTERIZATION OF BI12(SI1-XTIX)O20 MIXED-CRYSTALS
    YEH, TS
    HU, LJ
    TU, SL
    YANG, SJ
    HSU, SE
    HSU, K
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) : 7872 - 7876
  • [34] Bi4(Ti1/3Sn2/3)3O12掺杂BaTiO3基X8R陶瓷微观结构与介电性能(英文)
    肖谧
    王新
    张倩倩
    丁华明
    无机化学学报, 2012, 28 (08) : 1743 - 1748
  • [35] Growth and physical characterization of La-doped Bi4Ti3O12 crystals
    Kim, JP
    Ro, JH
    Ryu, MK
    Lee, SH
    Jang, MS
    Won, MS
    FERROELECTRICS, 2002, 268 : 351 - 356
  • [36] Class of tunable wide band gap semiconductors γ-(GexSi1-x)3N4
    Boyko, T. D.
    Bailey, E.
    Moewes, A.
    McMillan, P. F.
    PHYSICAL REVIEW B, 2010, 81 (15):
  • [37] Light-induced properties of ruthenium-doped Bi4 Ge3 O12 crystals
    Marinova, Vera
    Lin, Shiuan Huei
    Hsu, Ken Yuh
    Journal of Applied Physics, 2005, 98 (11):
  • [38] GROWTH OF SINGLE-CRYSTALS OF BI4TI3O12
    BRUTON, TM
    FERROELECTRICS, 1974, 7 (1-4) : 259 - 260
  • [39] GROWTH AND SPECTROMETRIC TESTS ON BI4GE3O12 CRYSTALS
    DAFINEI, I
    MITROAICA, G
    ANGELESCU, T
    NICULESCU, I
    CRYSTAL RESEARCH AND TECHNOLOGY, 1992, 27 (07) : 891 - 896
  • [40] The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition
    Jin, XJ
    Liang, JW
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (06) : 405 - 408