NiMn-pinned spin valves with high pinning field made by ion beam sputtering

Spin valves of film layer structure, Ta/NiMn/NiFe/Co/Cu/Co/NiFe/Ta/Substrate were fabricated by ion beam sputtering. Optimization of the processes of deposition and posthermal treatment yields highly (111) oriented spin valve films with a giant-magnetoresistance ratio of above 4% and pinning field of 650 Oe. This is the strongest pinning field ever observed. It stays constant up to 180 degrees C, then decreases to zero at a blocking temperature of 380 degrees C. These spin valves are highly thermally stable and, thus, suitable for the application of high density recording heads. (C) 1996 American Institute of Physics.