Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide.: X-ray crystal structures of [Et2GaAs(SiMe3)2]2, [Et2GaSb(SiMe3)2]2 and Et2GaAs(SiMe3)2Ga(Et)2Sb(SiMe3)2

The 1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) leads to the isolation of [Et2GaAs(SiMe3)(2)](2) (1), while the analogous reaction with Sb(SiMe33) results in the formation of [Et2GaSb(SiMe3)(2)](2) (2). The mixed-pnicogen compound Et2GaAs(SiMe3)(2)Ga(Et)(2)Sb(SiMe3)(2) (3) was obtained from both the equilibration of 1 and 2, as well as the 2:1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) and Sb(SiMe3)(3). X-ray crystal structures are reported for 1, 2 and 3, as well as a variable temperature H-1-NMR study of 2 and 3. The dimer 2 was found to exhibit a dimer/trimer equilibrium in solution. Thermolysis of all three compounds results in the formation of GaAs, GaSb or GaAsxSb(1-x) through a beta-hydride elimination pathway. (C) 1999 Elsevier Science S.A. All rights reserved.