Density-controlled growth of aligned ZnO nanowire arrays by seedless chemical approach on smooth surfaces

被引：217

作者：

Xu, Sheng ^{[1
]}

Lao, Changshi ^{[1
]}

Weintraub, Benjamin ^{[1
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2008年 / 23卷 / 08期

关键词：

D O I：

10.1557/JMR.2008.0274

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel ZnO seedless chemical approach for density-controlled growth of ZnO nanowire (NW) arrays has been developed. The density of ZnO NWs is controlled by changing the precursor concentration. Effects of both growth temperature and growth time are also investigated. By this novel synthesis technique, ZnO NW arrays can grow on any substrate (polymer, glass, semiconductor, metal, and more) as long as the surface is smooth. This technique represents a new, low-cost, time-efficient, and scalable method for fabricating ZnO NW arrays for applications in field emission, vertical field effect transistor arrays, nanogenerators, and nanopiezotronics.

引用

页码：2072 / 2077

页数：6

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