Switched inductor dual-band CMOS cross-coupled VCO

被引：2

作者：

Jang, Sheng-Lyang ^{[1
,2
]}

Huang, Jhin-Fang ^{[1
]}

Lin, Yu-Shen ^{[1
]}

Chang, Chia-Wei ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Elect, Taipei, Taiwan

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2013年 / 74卷 / 03期

关键词：

CMOS; Output power; Switching inductor; LC resonator; Differential dual-band VCO; LC VCO; TUNING-RANGE;

D O I：

10.1007/s10470-012-0025-3

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This letter proposes a high-performance CMOS dual-band voltage-controlled oscillator (VCO). The VCO consists of two cross-coupled VCOs coupled by a pair of switched inductors or LC resonators to vary the resonator's inductance. A pair of nMOSFET is used to switch high- and low-frequency bands. The VCO operates at the high-band using low resonator's inductance and the VCO operates at the low-band using large inductance. The proposed VCO has been implemented with the TSMC 0.18 mu m 1P6M CMOS technology and it can generate differential signals in the frequency range of 5.6-6.66 GHz and 4.13-4.75 and it also has comparable high output voltage swings at both low and high-frequency bands. The die area of the dual-band VCO is 0.84 x 1.1 mm(2). At the supply voltage of 0.75 V, the high (low)-band figure of merit is -193.6 (-192.3) dBc/Hz.

引用

页码：527 / 532

页数：6

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