Effects of pulling rate fluctuation on the interstitial-vacancy boundary formation in CZ-Si single crystal

被引：4
|
作者：
Park, BM [1 ]
See, GH [1 ]
Kim, G [1 ]
机构：
[1] LG Siltron Inc, Kumi 730350, Kyungbuk, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 203卷 / 1-2期
关键词：
silicon; i-v boundary; pulling rate;
D O I：
10.1016/S0022-0248(99)00072-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In CZ-Si crystal, the position of interstitial-vacancy (i-v) boundary is mainly controlled by the factors of crystal pulling rate and temperature gradient. However, the fluctuations of both high and low frequencies in pulling rate did not vary the i-v boundary position severely. The reason for this was found to be the time-delayed phenomena in crystal growth process. The radial variation of i-v boundary based on the V/G was derived from the modeling of the time-delayed growth characteristics. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：67 / 74
页数：8
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