Improved Precursor Chemistry for the Synthesis of III-V Quantum Dots

被引：133

作者：

Harris, Daniel K. ^{[2
]}

Bawendi, Moungi G. ^{[1
]}

机构：

[1] MIT, Dept Chem, Cambridge, MA 02139 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 50期

关键词：

III-V semiconductors - Nanocrystals - Indium arsenide - Semiconductor quantum dots;

D O I：

10.1021/ja309863n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide quantum dots indeed improves with decreased precursor reactivity.

引用

页码：20211 / 20213

页数：3