Improved Precursor Chemistry for the Synthesis of III-V Quantum Dots

被引:131
作者
Harris, Daniel K. [2 ]
Bawendi, Moungi G. [1 ]
机构
[1] MIT, Dept Chem, Cambridge, MA 02139 USA
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1021/ja309863n
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The synthesis of III-V quantum dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide quantum dots indeed improves with decreased precursor reactivity.
引用
收藏
页码:20211 / 20213
页数:3
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