Synthesis and Thermoelectric Properties of Ni-Doped ZrCoSb Half-Heusler Compounds

被引：34

作者：

Zhao, Degang ^{[1
]}

Wang, Lin ^{[1
]}

Bo, Lin ^{[1
]}

Wu, Di ^{[1
]}

机构：

[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Shandong, Peoples R China

来源：

METALS | 2018年 / 8卷 / 01期

关键词：

half-Heusler compound; thermoelectric property; ZrCoSb; Ni-doping; POWER-GENERATION; PERFORMANCE; SYSTEM; ZR; HF;

D O I：

10.3390/met8010061

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Ni-doped ZrCo1-xNixSb half-Heusler compounds were prepared by arc-melting and spark plasma sintering technology. X-ray diffraction analysis results showed that all samples were crystallized in a half-Heusler phase. Thermoelectric properties of ZrCo1-xNixSb compounds were measured from room temperature to 850 K. The electrical conductivity and the absolute value of Seebeck coefficient increased with the Ni-doping content increasing due to the Ni substitution at Co. sites. The lattice thermal conductivity of ZrCo1-xNixSb samples was depressed dramatically because of the acoustic phonon scattering and point defect scattering. The figure of merit of ZrCo1-xNixSb compounds was improved due to the decreased thermal conductivity and improved power factor. The maximum ZT value of 0.24 was achieved for ZrCo0.92Ni0.08Sb sample at 850 K.

引用

页数：7

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