Spin Splitter Based on Magnetically Confined Semiconductor Microstructure Modulated by Spin-Orbit Coupling

被引：32

作者：

Lu, Maowang ^{[1
]}

Chen, Saiyan ^{[1
]}

Huang, Xinhong ^{[1
]}

Zhang, Guilian ^{[1
]}

机构：

[1] Guilin Univ Technol, Coll Sci, Guilin 541004, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2018年 / 6卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Magnetically confined semiconductor microstructure; Goos-Hanchen effect; spin splitter; 2-DIMENSIONAL ELECTRON-GAS; ART; NO; 246601; SCHOTTKY METAL; BARRIER NANOSTRUCTURES; POLARIZATION; TRANSPORT; MAGNETORESISTANCE; HETEROSTRUCTURES; MANIPULATION; SPINTRONICS;

D O I：

10.1109/JEDS.2018.2793256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a theoretical investigation on Goose-Hanchen (GH) effect for spin electrons across a magnetically confined GaAs/AlxGa1-xAs microstructure modulated by spin-orbit coupling [(SOC), including Rashba and Dresselhaus types]. An intrinsic symmetry in the device is broken by SOC, which gives rise to a considerable spin polarization effect in GH shifts of electrons. Both magnitude and direction of spin polarization can be manipulated by Rashba or Dresselhaus SOC, i.e., interfacial confining electric field or strain engineering. Based on such a semiconductor microstructure, a controllable spatial spin splitter can be proposed for spintronics applications.

引用

页码：227 / 232

页数：6

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