Thermoelectric effect spectroscopy and photoluminescence of high-resistivity CdTe:In

被引：16

作者：

Elhadidy, Hassan ^{[1
]}

Franc, Jan ^{[1
]}

Belas, Eduard ^{[1
]}

Hlidek, Pavel ^{[1
]}

Moravec, Pavel ^{[1
]}

Grill, Roman ^{[1
]}

Hoschl, Pavel ^{[1
]}

机构：

[1] Charles Univ Prague, Inst Phys, CR-12116 Prague, Czech Republic

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 09期

关键词：

CdTe : In; defect levels; thermoelectric effect spectroscopy; photoluminescence;

D O I：

10.1007/s11664-008-0471-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermoelectric effect spectroscopy and photoluminescence techniques were used to study the defect levels in samples from three crystals of CdTe:In grown by the vertical gradient freeze method. The main goal of the investigation was to study defects, which strongly trap charge carriers or act as recombination centers in order to eliminate them from the technological process. The main difference among detecting and non-detecting samples was the absence of electron traps with a very high capture cross-section and energy 0.6 eV to 0.7 eV, which act as lifetime killers even at low concentrations. Recently published ab initio calculations show a complex of Te antisite and Cd vacancy within this energy range.

引用

页码：1219 / 1224

页数：6

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