Size-sensitive Young's modulus of kinked silicon nanowires

被引:7
作者
Jiang, Jin-Wu [1 ]
Zhao, Jun-Hua [1 ]
Rabczuk, Timon [1 ]
机构
[1] Bauhaus Univ Weimar, Inst Struct Mech, D-99423 Weimar, Germany
关键词
CARBON NANOTUBES; KINKING; GROWTH;
D O I
10.1088/0957-4484/24/18/185702
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We perform both classical molecular dynamics simulations and beam model calculations to investigate the Young's modulus of kinked silicon nanowires (KSiNWs). The Young's modulus is found to be highly sensitive to the arm length of the kink and is essentially inversely proportional to the arm length. The mechanism underlying the size dependence is found to be the interplay between the kink angle potential and the arm length potential, where we obtain an analytic relationship between the Young's modulus and the arm length of the KSiNW. Our results provide insight into the application of this novel building block in nanomechanical devices.
引用
收藏
页数:6
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