High Speed Sense Amplifier with Efficient Pre-charge Scheme for PCM in the 28nm Process

被引：0

作者：

Zhang, Qi ^{[1
,2
,3
]}

Chen, Houpeng ^{[1
,3
]}

Fan, Xi ^{[1
,2
,3
]}

Lei, Yu ^{[1
,2
,3
]}

Hu, Jiajun ^{[1
,2
,3
]}

Li, Xiaoyun ^{[1
,2
,3
]}

Wang, Qian ^{[1
,2
,3
]}

Song, Zhitang ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai Key Lab Nanofabricat Technol Memory, Shanghai 200050, Peoples R China

来源：

2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE | 2016年 / 9818卷

关键词：

Pre-charge scheme; Sense amplifier; Phase change memory;

D O I：

10.1117/12.2245021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved sense amplifier with speed-up pre-charge scheme is introduced in this paper. What's more, in order to avoid unexpected fatal damage while reading operation, clamp voltage is adopted. Distinguished with the conventional current sense amplifier, the proposed sense amplifier shortens not only the read access time by reducing the charging time due to parasite capacitor of storage cells but also the delay time because of the RC delay on wire by using two branches of pre-charge circuit at the both ends of bit lines. The simulation result taken in SMIC 28nm process shows that, with 1Kb PCM array, the proposed sense amplifier can efficiently reduce the access time from 33.7ns to 16.5ns.

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页数：4

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