Bias-dependent spin relaxation in a Spin-LED

被引：2
作者：
Bosco, CAC
Snouck, D
Van Dorpe, P
Van Roy, W
Koopmans, B
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] IMEC, B-3001 Louvain, Belgium
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2006年 / 126卷 / 2-3期
关键词：
spin dynamics; spin injection; semiconductor devices;
D O I：
10.1016/j.mseb.2005.09.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the bias-dependent spin relaxation in Cu-CoFe-AlOx-GaAs/AlGaAs-type of Spin-LEDs using microscopic time-resolved magnetization modulation spectroscopy (TIMMS). We observed a significant dependence of the electron spin relaxation time (effects as large as 40%) as a function of applied bias. The additional spin relaxation at non-zero bias is found to scale almost linearly with the injection current, and thereby with the current-induced hole density in the active region. This observation is indicative for a dominant contribution by Bir-Aronov-Pikus (BAP) electron-hole spin-flip scattering. In agreement with this observation, a similar BAP-enhanced spin relaxation shows up at increased laser fluence. From spatio-temporal imaging of spin relaxation, scanning pump and probe beams across the 50 mu m outside of optical window, we found a significant position dependence (lateral effects) of the spin dynamics. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：107 / 111
页数：5
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