Deformation in the hysteresis loop of Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors

被引：1

作者：

Lee, EG ^{[1
]}

Lee, JK

Lee, JG

Kim, JY

Jang, HM

机构：

[1] Chosun Univ, Dept Mat Engn, Kwangju 501759, South Korea

[2] Kookmin Univ, Dept Met Mat Engn, Seoul 136702, South Korea

[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1999年 / 18卷 / 13期

关键词：

D O I：

10.1023/A:1006623509920

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As-patterned capacitors were positively poled by the dc plasma potential during reactive ion etching of Pt. The hysteresis loops of the capacitors are found to be shifted, slanted and constricted by space charges trapped at domain boundaries. Annealing the top electrode removes the effect of the space charges and the structural defects, resulting in a good symmetrical hysteresis loop.

引用

页码：1033 / 1035

页数：3

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