Accurate infrared absorption measurement of interstitial and precipitated oxygen in p+ silicon wafers

被引：0
|
作者：
De Gryse, O
Clauws, P
Rossou, L
Van Landuyt, J
Vanhellemont, J
机构：
[1] State Univ Ghent, B-9000 Ghent, Belgium
[2] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
[3] Wacker Siltron AG, D-84479 Burghausen, Germany
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 45卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0167-9317(99)00180-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：277 / 282
页数：6
相关论文
共 50 条
  • [1] Accurate infrared absorption measurement of interstitial and precipitated oxygen in heavily doped silicon
    De Gryse, O
    Clauws, P
    Rossou, L
    Van Landuyt, J
    Vanhellemont, J
    Mondelaers, W
    HIGH PURITY SILICON V, 1998, 98 (13): : 398 - 409
  • [2] Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon
    De Gryse, O
    Clauws, P
    Rossou, L
    Van Landuyt, J
    Vanhellemont, J
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (09): : 3661 - 3663
  • [3] Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon
    De, Gryse, O.
    Clauws, P.
    Rossou, L.
    Van, Landuyt, J.
    Vanhellemont, J.
    Review of Scientific Instruments, 70 (09): : 3661 - 3663
  • [4] Determination of interstitial oxygen concentration in oxygen-precipitated silicon wafers by low-temperature high-resolution infrared spectroscopy
    Saito, Hiroyuki, 1600, JJAP, Minato-ku, Japan (34):
  • [5] Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen
    Borghesi, A
    Sassella, A
    Geranzani, P
    Porrini, M
    Pivac, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 145 - 148
  • [6] Detection and mapping of oxygen in silicon wafers by scanning infrared absorption
    Philippe Torchio
    Roland Occelli
    International Journal of Infrared and Millimeter Waves, 1997, 18 : 491 - 499
  • [7] Detection and mapping of oxygen in silicon wafers by scanning infrared absorption
    Torchio, P
    Occelli, R
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1997, 18 (02): : 491 - 499
  • [8] Detection and mapping of oxygen in silicon wafers by scanning infrared absorption
    Lab d'Optique et Spetrometrie Laser, Marseille, France
    Int J Infrared Millim Waves, 2 (491-499):
  • [9] Mo contamination in p/p+ epitaxial silicon wafers
    Aoki, Masaki, 1600, JJAP, Minato-ku, Japan (34):
  • [10] DETERMINATION OF INTERSTITIAL OXYGEN CONCENTRATION IN OXYGEN-PRECIPITATED SILICON-WAFERS BY LOW-TEMPERATURE HIGH-RESOLUTION INFRARED-SPECTROSCOPY
    SAITO, H
    SHIRAI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9A): : L1097 - L1099
12345