Mechanism of slow-mode degradation in II-VI wide bandgap compound based blue-green laser diodes

被引：0

作者：

Adachi, M ^{[1
]}

Yukitake, H ^{[1
]}

Watanabe, M ^{[1
]}

Koizumi, K ^{[1
]}

Lee, HC ^{[1
]}

Abe, T ^{[1
]}

Kasada, H ^{[1
]}

Ando, K ^{[1
]}

机构：

[1] Tottori Univ, Elect & Elect Dept, Tottori 6808552, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 229卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200201)229:2<1049::AID-PSSB1049>3.0.CO;2-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dislocation-free blue-green laser diodes of (ZnCd)Se/(ZnMg)(SSe) show a "slow-mode" degradation during device operation. This degradation is caused not by generation and propagation of macroscopic defects, but by microscopic-point defect reaction (marked enhancement in its concentration and resulting migration process) during high-density carrier-injection. It is also evidenced experimentally that the direct driving force on the marked defect reaction is derived from minority carrier injection induced e-h non-radiative recombination process at localized point defect centers in the p-type cladding layer of the LID devices.

引用

页码：1049 / 1053

页数：5

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