Field emission characteristics of pristine and N-doped graphene measured by in-situ transmission electron microscopy

被引：22
|
作者：
Kashid, Ranjit V. [1 ]
Yusop, Mohd Zamri [2 ]
Takahashi, Chisato [2 ]
Kalita, Golap [2 ,3 ]
Panchakarla, Leela S. [4 ]
Joag, Dilip S. [1 ]
More, Mahendra A. [1 ]
Tanemura, Masaki [2 ]
机构：
[1] Univ Pune, Dept Phys, Ctr Adv Studies Mat Sci & Condensed Matter Phys, Pune 411007, Maharashtra, India
[2] Nagoya Inst Technol, Dept Frontier Mat, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Nagoya Inst Technol, Ctr Fostering Young & Innovat Researchers, Showa Ku, Nagoya, Aichi 4668555, Japan
[4] Jawaharlal Nehru Ctr Adv Sci Res, CSIR Ctr Excellence Chem, Mat Unit, Int Ctr Mat Sci Chem & Phys, Bangalore 560064, Karnataka, India
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 21期
关键词：
SINGLE-LAYER GRAPHENE;
D O I：
10.1063/1.4809930
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the field emission characteristics of a few-layer pristine and N-doped graphene by the in-situ transmission electron microscopy. The measurements were performed with a Pt-Ir nanoprobe and at a vacuum gap of 400 nm. The turn on voltage, required to draw an emission current of 1 nA from pristine and N-doped graphene, was found to be 230 and 110 V, respectively. The lower turn on voltage for the N-doped graphene can be explained from the improved electrical conductivity and up-shift of the Fermi level with nitrogen doping. Structural deformation/contraction/buckling of the N-doped graphene sheet was observed with the field emission current exceeding similar to 6.9 mu A, which can be attributed to the Joule heating. (C) 2013 AIP Publishing LLC.
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页数：5
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