Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes

被引：0
|
作者：
Kakushima, K. [1 ]
Ikeuchi, Y. [1 ]
Hoshii, T. [1 ]
Muneta, I. [1 ]
Wakabayashi, H. [1 ]
Tsutsui, K. [2 ]
Iwai, H. [2 ]
Kikuchi, T. [3 ]
Ishikawa, S. [3 ]
机构：
[1] Tokyo Inst Technol, Sch Engn, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Inst Innovat Res, Tokyo, Japan
[3] Toshiba Co Ltd, Corp Mfg Engn Ctr, Tokyo, Japan
来源：
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2017年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：85 / 86
页数：2
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