Phase control of semi-polar (11(2)over-bar2) and non-polar (11(2)over-bar0) GaN on cone shaped r-plane patterned sapphire substrates

被引：0

作者：

Wang, Mei-Tan ^{[1
]}

Brunner, Frank ^{[2
]}

Liao, Kuan-Yung ^{[1
]}

Li, Yun-Li ^{[1
]}

Tseng, Snow H. ^{[1
]}

Weyers, Markus ^{[2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 371卷

关键词：

Nucleation; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; LATERAL EPITAXIAL OVERGROWTH; GROWTH; MOVPE;

D O I：

10.1016/j.jcrysgro.2013.01.032

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The control of formation of semi-polar (11 (2) over bar2) and nonpolar a-plane (11 (2) over bar0) GaN phases on r-plane cone shaped patterned sapphire substrates (CPSS) by metalorganic vapor-phase epitaxy has been investigated. With a nucleation layer grown at 535 degrees C and 200 mbar, only semi-polar (11 (2) over bar2) GaN is formed. Increasing the nucleation layer temperature to 965 degrees C, only (11 (2) over bar0) GaN is grown at 200 mbar. At reduced reactor pressure of 60 mbar, phase selectivity breaks down and semi-polar (11 (2) over bar2) and non-polar (11 (2) over bar0) GaN exist simultaneously. The crystalline quality of a-plane GaN on r-plane CPSS can be effectively improved using optimized growth direction control. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：11 / 16

页数：6

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