Enhanced Current Drive of Double-Gate α-IGZO Thin-Film Transistors

被引：35

作者：

Chen, Tsang-Long ^{[1
,2
]}

Huang, Kuan-Chang ^{[1
,2
]}

Lin, Hsuan-Yi ^{[1
,2
]}

Chou, C. H. ^{[3
]}

Lin, H. H. ^{[3
]}

Liu, C. W. ^{[1
,2
,4
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Chimei Innolux Corp, Tainan 74147, Taiwan

[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 03期

关键词：

Amorphous In-Ga-Zn-O (IGZO) (alpha-IGZO) thin-film transistors (TFTs); double gate (DG); drive current; hydrogen;

D O I：

10.1109/LED.2013.2238884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the degradation by hydrogen, the mobilities near the top and bottom insulator/channel interfaces are lower than those at the central amorphous In-Ga-Zn-O (alpha-IGZO) channel, reflecting the mobilities of 10.2, 7.5, and 1.8 cm(2)/V . s for double-gate (DG), bottom-gate, and top-gate operations, respectively. DG operation can push more electrons into the central channel than single-gate (SG) operation. Based on the secondary ion mass spectroscopy, hydrogen has a higher concentration near the top and bottom interfaces than at the central region. Based on the first-principle calculations, the hydrogen can form shallow donor states and degrade the mobility of alpha-IGZO thin-film transistors. The DG operation also creates a larger lateral electric field along the channel direction than SG operation. Both mobility enhancement and lateral electric field increase lead to significant drive current enhancement.

引用

页码：417 / 419

页数：3

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