Nanometer patterning using ma-N 2400 series DUV negative photoresist and electron beam lithography

Results of electron beam exposure of a DUV sensitive negative tone photoresist composed of a novolak/aromatic bisazide system are presented. Contents of the components of the resist solution were varied to cover a wide range of film thicknesses and to attain optimal performance of the resist. Dense patterns (lines and spaces) with dimensions of 100 nm and below of the resist patterned by electron beam exposure demonstrate its excellent resolution capability and the possibility to generate patterns with steep side walls and high aspect ratios.